SiC Power Devices & Modules
SILICON CARBIDE BARE DIE MOSFETS
Build power electronics for the most demanding automotive applications using the unrivaled efficiency, frequency, temperature, and voltage capabilities of SiC.
Our SiC bare die MOSFETs use a proven technology licensed from GE Aviation Systems to deliver Industry-leading FIT rates.
SILICON CARBIDE BARE DIE MOSFETS FEATURES
- High voltage and low RDSON up to 200°C
- Fast switching enabled by ultra-low gate resistance
- Very low, temperature invariant switching losses
- Avalanche ruggedness superior to silicon
- Fast recovery body diode for synchronous rectification
| Part Number | Status | Buy Online | Datasheet | RoHS | REACH | Pb-free | CA Prop 65 | EAR99 | Blocking Voltage V | RDSON at 25℃ mΩ | Current Rating @ 25℃ A | Max Operating Temperature | Technology | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TBM30390120 | Active | N |  | Y | Y | Y | Y | Y | 1200 | 39 | 59 | 200℃ | Gen 3+ | Automotive |
| TBM30270120 | On Request | N | Y | Y | Y | Y | Y | Y | 1200 | 27 | 82 | 200℃ | Gen 3+ | Automotive |
| TBM30200120 | On Request | Y | Y | Y | Y | Y | Y | Y | 1200 | 20 | 108 | 200℃ | Gen 3+ | Automotive |
| TBM30116120 | On Request | N | Y | Y | Y | Y | Y | Y | 1200 | 11.6 | 177 | 200℃ | Gen 3+ | Automotive |