SiC Power Devices & Modules
SILICON CARBIDE DISCRETE MOSFETS
Create power conversion systems having improved efficiency and lower operating temperatures with our high voltage, high-switching frequency SiC MOSFETs.
Coherent SiC MOSFETs provide superior energy efficiency and performance over existing silicon devices. Our MOSFETs are qualified at 200°C junction temperature and have industry-leading avalanche ratings.
SILICON CARBIDE DISCRETE MOSFETS FEATURES
- High voltage and low RDSON up to 200°C
- Fast switching enabled by ultra-low gate resistance
- Very low, temperature invariant switching losses
- Avalanche ruggedness superior to silicon
- Fast recovery body diode for synchronous rectification
| Part Number | Status | Buy Online | Datasheet | RoHS | REACH | Pb-free | CA Prop 65 | EAR99 | Package | Blocking Voltage V | RDSON at 25℃ mΩ | Current Rating @ 25℃ A | Max Operating Temperature | Technology | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TM3B0039120A | Active | N |  | Y | Y | Y | Y | Y | TO-247-4L | 1200 | 39 | 61 | 200℃ | Gen 3+ | Automotive |
| TM3B0039120A | On Request | N | Y | Y | Y | Y | Y | Y | TO-263-4L | 1200 | 39 | 61 | 200℃ | Gen 3+ | Automotive |
| TM3B0027120A | On Request | N | Y | Y | Y | Y | Y | Y | TO-247-4L | 1200 | 27 | 86 | 200℃ | Gen 3+ | Automotive |
| TM3B0020120A | On Request | Y | Y | Y | Y | Y | Y | Y | TO-247-4L | 1200 | 20 | 115 | 200℃ | Gen 3+ | Automotive |