State-of-the-Art Epitaxy Technology

Coherent offers 100mm, 150mm, and 200mm SiC epitaxial wafers designed for applications from R&D to high-volume production.  Epi specifications are customized to allow manufacturers to optimize performance and yield across various high-power and high-temperature device technologies.

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SiC Substrates  
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SiC EPITAXY CAPABILITIES HIGHLIGHTS

Coherent continuously improves our materials quality and increases substrate diameters to enable our customers to increase device performance and lower costs.

Key Capabilities:

Best-in-Class Quality: High uniformity and low defects with high device yield.

  • Single and Multiple: Wafer platforms with state of the art metrology tools
  • Advanced Epilayers: Wide range of doping concentrations with layers up to 250 µm
  • Multilayer Structures: Various doping levels, p-n junctions, embedded and contact layers

Optimized for Advanced Device Structures

Our SiC epitaxial wafers support the development of a wide range of high-performance devices, including:

  • Super Junction MOSFETs
  • High Voltage IGBTs
  • Trench MOSFETs
  • Avalanche Photo Diodes
  • Particle Detectors (alpha, neutron)

These devices benefit from SiC’s material properties, making them

  • Electric Vehicles
  • Renewable Energy Systems
  • Power Grid Distribution
  • High-Temperature Industrial Applications