SiC FOR RF ELECTRONICS
Scale up the production of GaN-on-SiC RF power amplifiers and other RF and microwave devices with our high-quality semi-insulating SiC substrates.
Coherent has pioneered the development of large-diameter, semi-insulating SiC substrates, and delivers high resistivity material to enable fabrication of components with low power dissipation, high frequency operation, and good thermal stability
Datasheet
SiC Substrates
SiC Substrates
| SILICON CARBIDE (SIC) SUBSTRATES | ||
|---|---|---|
| Physical Characteristics | ||
| Structure | Hexagonal, Single Crystal | |
| Diameter | Up to 200 mm | |
| Grades | Prime, Development, Mechanical | |
| Thermal Properties | ||
| Thermal Conductivity | 370 (W/mK) at room temperature | |
| Thermal Expansion Coefficient | 4.5 x 10-6 K -1 | |
| Specific Heat (25°C) | 0.71 (J/g°C) | |
| Additional Key Properties of Coherent SiC Substrates (typical values) | ||
| Parameter | N-type | Semi-insulating |
| Polytype | 4H | 6H |
| Dopant | Nitrogen | Vanadium |
| Resistivity | ~0.02 Ohm-cm | 109 Ohm-cm |
| Orientation | 4° off-axis | On-axis |
| Roughness, Ra | <5Å | <5Å |
| Dislocation density | ~3,000 cm-2 | 10,000 cm-2 |
| Micropipe density | < 10cm-2 | < 10 cm-2 |