SUBSTRATES & EPITAXY
Fabricate a wide range of high-performance power electronics devices on high-quality SiC wafers as large as 200 mm in diameter.
N-Type SiC Substrates
Fabricate MOSFETs, IGBTs, and other components for high-temperature, high-frequency power electronics used in electric and hybrid vehicles, and aerospace applications.
SI-Type SiC Substrates
Scale up the production of GaN-on-SiC RF power amplifiers and other RF and microwave devices with our high-quality semi-insulating SiC substrates.
State-of-the-Art Epitaxy Technology
Coherent offers 100mm, 150mm, and 200mm SiC epitaxial wafers designed for applications from R&D to high-volume production.